digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mfe120?mfe122 du al gate mosfet vhf amplifier maximum ratings rating symbol value unit drain source voltage v ds 25 vdc drain current i d 30 madc total power dissipation @ t a = 25c derate above 25c p d 300 1.7 mw mw/c operating and storage temperature range t j , t stg -65 to +175 c electrical characteristics (t a = 25c unless otherwise noted) characteristics symbol min typ max unit off characteristics drain source breakdown voltage (i d = 100 adc, v s = 0, v g1s = -4.0 vdc, v g2s = 4.0v) v (br)dsx 25 - - vdc gate 1 ? source breakdown voltage (1) (i g1 = 10 adc, v g2s = 0) v (br)g1so 7.0 - 20 vdc gate 2 ? source breakdown voltage (1) (i g2 = 10 adc, v g2s = 0) v (br)g2so 7.0 - 20 vdc gate 1 leakage current (v g1s = 6.0 vdc, v g2s = 0, v ds = 0) i g1ss - - 20 nadc gate 2 leakage current (v g2s = 6.0 vdc, v g1s = 0, v ds = 0) i g2ss - - 20 nadc gate 1 to source cutoff voltage (v ds = 15 vdc, v g2s = 4.0 vdc, i d = 200 adc) v g1s(off) - - -4.0 vdc gate 2 to source cutoff voltage (v ds = 15 vdc, v g1s = 0, i d = 200 adc) v g2s(off) - - -4.0 vdc on characteristics zero-gate voltage drain current (v ds = 15 vdc, v g1s = 0, v g2s = 4.0 vdc) mfe120 MFE121 mfe122 i dss 2.0 5.0 2.0 7.0 10 9.0 18 30 20 madc small signal characteristics forward transfer admitta nce (gate 1 to drain) (v ds = 15 vdc, v g2s = 4.0 vdc, i d = 10madc, f = 1.0 khz) mfe120, mfe122 MFE121 ? y fs ? 8000 10000 - - 18000 20000 mhos input capacitance (v ds = 15 vdc, v g2s = 4.0 vdc, i d = i dss , f = 1.0 mhz) mfe120, mfe122 MFE121 c iss - - 4.5 4.5 7.0 6.0 pf reverse transfer capacitance (v ds = 15 vdc, v g2s = 4.0 vdc, i d = 6.0 madc, f = 1.0 mhz) c rss - 0.023 - pf output capacitance (v ds = 15 vdc, v g2s = 4.0 vdc, i d = i dss , f = 1.0 mhz) mfe120, mfe122 MFE121 c oss - - 2.5 2.5 4.0 3.5 pf functional characteristics noise figure (v ds = 15 vdc, v g2s = 4.0 vdc, i d = 6.0madc, z s is optimized for nf) (f = 105mhz, figure 1) (f = 60mhz, figure 3) (f = 200mhz, figure 3) mfe120 MFE121 MFE121 nf - - - 2.9 2.6 2.6 5.0 5.0 5.0 db sales@digitronco r p.com fax +1.908.245-0555 www.digitroncorp.com rev. 20121114
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mfe120?mfe122 du al gate mosfet vhf amplifier electrical characteristics (t a = 25c unless otherwise noted) characteristics symbol min typ max unit common source power gain (v ds = 15 vdc, v g2s = 4.0 vdc, i d = 6.0madc, z s is optimized for nf) (f = 105mhz, figure 1) (f = 60mhz, figure 3) (f = 200mhz, figure 3) mfe120 MFE121 MFE121 g ps 17 20 17 19.6 27.8 18.6 - - - db level of unwanted signal for 1.0% cross modulation (v ds = 15 vdc, v g2s = 4.0 vdc, i d = 6.0madc) - - 100 - mv common source conver sion power gain (gate 1 injection, figure 2) (v ds = 15 vdc, v g2s = 4.0 vdc, local oscillator voltage = 925mvrms (signal frequency = 60mhz, local oscillator frequency = 104mhz) (signal frequency = 200mhz, local oscillator frequency = 244mhz) mfe122 mfe122 g c 15 12 16.5 13.3 - - db sales@digitronco r p.com fax +1.908.245-0555 www.digitroncorp.com rev. 20121114
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mfe120?mfe122 du al gate mosfet vhf amplifier sales@digitronco r p.com fax +1.908.245-0555 www.digitroncorp.com rev. 20121114
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mfe120?mfe122 du al gate mosfet vhf amplifier available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. sales@digitronco r p.com fax +1.908.245-0555 www.digitroncorp.com rev. 20121114
|
